1 power mosfet IRFB17N60K, sihfb17n60k features ? smaller to-220 package ? low gate charge q g results in simple drive requirement ? improved gate, avalanche and dynamic dv/dt ruggedness ? fully characterized capacitance and avalanche voltage and current ? lead (pb)-free available applications ? switch mode power supply (smps) ? uninterruptible power supply ? high speed power switching ? hard switched and high frequency circuits notes a. repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. starting t j = 25 c, l = 2.3 mh, r g = 25 , i as = 17 a (see fig. 12). c. i sd 17 a, di/dt 380 a/s, v dd v ds , t j 150 c. d. 1.6 mm from case. product summary v ds (v) 600 r ds(on) ( )v gs = 10 v 0.35 q g (max.) (nc) 99 q gs (nc) 32 q gd (nc) 47 configuration single n -channel mosfet g d s to-220 g d s a v aila b le rohs* compliant ordering information package to-220 lead (pb)-free IRFB17N60Kpbf sihfb17n60k-e3 snpb IRFB17N60K sihfb17n60k absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 600 v gate-source voltage v gs 30 continuous drain current v gs at 10 v t c = 25 c i d 17 a t c = 100 c 11 pulsed drain current a i dm 68 linear derating factor 2.7 w/c single pulse avalanche energy b e as 330 mj repetitive avalanche current a i ar 17 a repetitive avalanche energy a e ar 34 mj maximum power dissipation t c = 25 c p d 340 w peak diode recovery dv/dt c dv/dt 11 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (p eak temperature) for 10 s 300 d mounting torque 6-32 or m3 screw 10 n www.kersemi.com
2 IRFB17N60K, sihfb17n60k notes a. repetitive rating, pulse width limi ted by max. junction temperature. b. pulse width 300 s; duty cycle 2 %. thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -58 c/w case-to-sink, flat, greased surface r thcs 0.50 - maximum junction-to-case (drain) r thjc -0.37 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 600 - - v v ds temperature coefficient v ds /t j reference to 25 c, i d = 1 ma - 600 - mv/c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 3.0 - 5.0 v gate-source leakage i gss v gs = 30 v - - 100 na zero gate voltage drain current i dss v ds = 600 v, v gs = 0 v - - 50 a v ds = 480 v, v gs = 0 v, t j = 125 c - - 250 drain-source on-state resistance r ds(on) v gs = 10 v i d = 10 a b - 0.35 0.42 forward transconductance g fs v ds = 50 v, i d = 10 a 5.9 - - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz, see fig. 5 - 2700 - pf output capacitance c oss - 240 - reverse transfer capacitance c rss -21- output capacitance c oss v gs = 0 v v ds = 1.0 v , f = 1.0 mhz - 2950 - v gs = 0 v v ds = 480 v , f = 1.0 mhz - 67 - effective output capacitance c oss eff. v gs = 0 v v ds = 0 v to 480 v - 120 - total gate charge q g v gs = 10 v i d = 17 a, v ds = 480 v see fig. 6 and 13 --99 nc gate-source charge q gs --32 gate-drain charge q gd --47 turn-on delay time t d(on) v dd = 300 v, i d = 17 a, r g = 7.5 , v gs = 10 v, see fig. 10 b -25- ns rise time t r -82- turn-off delay time t d(off) -38- fall time t f -32- drain-source body diode characteristics continuous source-drain diode current i s mosfet symbol showing the integral reverse p - n junction diode --17 a pulsed diode forward current a i sm --68 body diode voltage v sd t j = 25 c, i s = 17 a, v gs = 0 v b --1.5v body diode reverse recovery time t rr t j = 25 c, i f = 17 a, di/dt = 100 a/s b - 520 780 ns body diode reverse recovery charge q rr - 5620 8430 nc body diode reverse recovery time t rr t j = 125 c, i f = 17 a, di/dt = 100 a/s b - 580 870 ns body diode reverse recovery charge q rr - 6470 9700 nc forward turn-on time t on intrinsic turn-on time is neglig ible (turn-on is dominated by l s and l d ) s d g www.kersemi.com
3 IRFB17N60K, sihfb17n60k typical characteristics 25 c, unless otherwise noted fig. 1 - typical output characteristics fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature www.kersemi.com
4 IRFB17N60K, sihfb17n60k fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area www.kersemi.com
5 IRFB17N60K, sihfb17n60k fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case fig. 12a - unclamped inductive test circui t fig. 12b - unclamped inductive waveforms p u lse w idth 1 s d u ty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f a r g i as 0.01 t p d.u.t l v ds + - v dd dri v er a 15 v 20 v i as v ds t p www.kersemi.com
6 IRFB17N60K, sihfb17n60k fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic gate charge waveform fig. 13b - gate charge test circuit q gs q gd q g v g charge v gs d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v c u rrent reg u lator c u rrent sampling resistors same type as d.u.t. + - www.kersemi.com
7 IRFB17N60K, sihfb17n60k fig. 14 - for n-channel p. w . period di/dt diode reco v ery d v /dt ripple 5 % body diode for w ard drop re-applied v oltage re v erse reco v ery c u rrent body diode for w ard c u rrent v gs = 10 v * v dd i sd dri v er gate dri v e d.u.t. i sd w a v eform d.u.t. v ds w a v eform ind u ctor c u rent d = p. w . period + - + + + - - - * v gs = 5 v for logic le v el de v ices peak diode recovery dv/dt test circuit r g v dd ? d v /dt controlled b y r g ? dri v er same type as d.u.t. ? i sd controlled b y d u ty factor "d" ? d.u.t. - de v ice u nder test d.u.t circ u it layo u t considerations ? lo w stray ind u ctance ? gro u nd plane ? lo w leakage ind u ctance c u rrent transformer www.kersemi.com
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